Welcome to our Semiconductor Devices Quiz! This quiz is designed to test your knowledge and understanding of semiconductor devices, which are the building blocks of modern electronics. Semiconductor devices play a crucial role in various applications, from consumer electronics to advanced industrial systems.
This practice quiz has been created by Dr. Sandip Das for the students taking Semiconductor Devices (EE 2401) course in the Department of Electrical Engineering at Kennesaw State University. The quiz aims to help self evaluate student's preparation on the understanding of the subject matter in an efficient way and does NOT contribute to the final grade.
In this quiz, you'll encounter questions covering a wide range of topics related to semiconductor devices, including diodes, transistors, integrated circuits, and more. You'll have the opportunity to demonstrate your understanding of semiconductor physics, device characteristics, and practical applications.
Expect questions that challenge your comprehension of semiconductor device operation, characteristics, and performance metrics. By completing this quiz, you'll not only test your current knowledge but also identify areas for further study and improvement.
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The effective density of states in the conduction band
Temperature
The Fermi level
All of the above
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Czochralski
Float Zone
Bridgman
All of the above
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A semiconductor
A metal
An insulator
A superconductor
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1E-18 Joules
1.602E-19 Joules
1.602E+19 Joules
8.854E-14 Joules
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(A) Polycrystalline, (B) Amorphous, (C) Single Crystal
(A) Single Crystal, (B) Amorphous, (C) Polycrystalline
(A) Amorphous, (B) Polycrystalline, (C) Single Crystal
(A) Single Crystal, (B) Polycrystalline, (C) Amorphous
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Atoms
Immobile charge carriers
Phonons
Mobile charge carriers
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Simple Cubic
Face Centered Cubic (FCC)
Body Centered Cubic (BCC)
All of the above have same APF
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Doping concentration
Electron mobility
Applied electric field
All of the above
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Simple Cubic
Face Centered Cubic
Body Centered Cubic
Diamond
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Avalanche multiplication
Tunneling
Thermionic emission
Recombination
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Schottky barrier height
Temperature
Effective Richardson constant
All of the above
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Electrons will move along the direction of the electric field
Holes will move against the direction of the electric field
Electrons will move perpendicular to the electric field
Electrons will move against the direction of the electric field
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Higher impurity concentration at the middle of the ingot
Uniform impurity concentration throughout the ingot
Higher impurity concentration at the top of the ingot
Higher impurity concentration at the bottom of the ingot
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CdTe
GaAs
Si
InP
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Closer to the conduction band edge
Above the conduction band edge
Closer to the valence band edge
Below the valence band edge
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1
1/3
1/4
1/2
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(111)
(001)
(100)
(010)
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Concentrated current
Drift current
Diffusion current
Eddy current
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Decrease
Increase
Remain same
Becomes zero
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Higher impurity concentration at the middle of the ingot
Uniform impurity concentration throughout the ingot
Higher impurity concentration at the top of the ingot
Higher impurity concentration at the bottom of the ingot
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All of the above
A semiconductor with high work function
A semiconductor with high electron affinity
A Metal with low work function
A Metal with high work function
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20
12
10
14
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Increases
Decreases
Remains unchanged
Becomes zero
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Thermionic emission
Tunneling
Minority carrier injection
All of the above
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